| 发明名称 | Write and erase scheme for resistive memory device | ||
| 摘要 | A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value. | ||
| 申请公布号 | US8787069(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201213592224 | 申请日期 | 2012.08.22 |
| 申请人 | Crossbar, Inc. | 发明人 | Nazarian Hagop;Jo Sung Hyun |
| 分类号 | G11C11/00 | 主分类号 | G11C11/00 |
| 代理机构 | Ogawa P.C. | 代理人 | Ogawa P.C. |
| 主权项 | 1. A method for programming a two terminal resistive memory device, the method comprising: applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell by detecting a rate of a current change with respect to a change in the bias voltage across; and initiating a termination process to stop applying of the bias voltage after the rate of the current change with respect to the change in the bias voltage is equal to or greater than a predetermined value. | ||
| 地址 | Santa Clara CA US | ||