发明名称 Semiconductor device, electronic device having the same, and driving method of the same
摘要 A digital circuit which can operate normally regardless of binary potentials of an input signal is provided. A semiconductor device comprising a correcting unit and one or a plurality of circuit elements, the correcting unit including a first capacitor, a second capacitor, a first switch, and a second switch, wherein the first electrode of the first capacitor is connected to an input terminal, the supply of a first potential to the second electrode of the first capacitor is controlled by the first switch, the supply of a second potential to the second electrode of the second capacitor is controlled by the second switch, and a potential of the second electrode of the first capacitor or a potential of the second electrode of the second capacitor is supplied to the one or the plurality of circuit elements.
申请公布号 US8786349(B2) 申请公布日期 2014.07.22
申请号 US201213559662 申请日期 2012.07.27
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime
分类号 H03K5/08 主分类号 H03K5/08
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a first wiring; a first switch comprising a first terminal and a second terminal; the first terminal of the first switch being electrically connected to the first wiring; a second switch comprising a first terminal and a second terminal, the first terminal of the second switch being electrically connected to the second terminal of the first switch; a second wiring electrically connected to the second terminal of the second switch; a capacitor comprising a first electrode and a second electrode, the first electrode being electrically connected to the second terminal of the first switch; a third switch comprising a first terminal and a second terminal, the first terminal being electrically connected to the second electrode of the capacitor; a third wiring electrically connected to the second terminal of the third switch; a transistor comprising a gate, a first terminal, and a second terminal, the gate being electrically connected to the second electrode of the capacitor and to the first terminal of the third switch, and the first terminal being electrically connected to the third wiring; and a fourth wiring electrically connected to the second terminal of the transistor, wherein an input signal is input to the second terminal of the second switch, wherein the third wiring is configured to be set at a high power supply potential, wherein the fourth wiring is configured to be set at a low power supply potential, wherein the first wiring is configured to be set at a potential lower than the high power supply potential and higher than the low power supply potential, and wherein the second electrode of the capacitor, the first terminal of the third switch, and the gate of the transistor are directly connected to a same electrical node.
地址 Atsugi-shi, Kanagawa-ken JP