Solid-state image sensor, control method for the same, and electronic device

摘要

There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region.

主权项

1. A solid-state image sensor comprising:
a plurality of unit pixels each including
a photoelectric transducer which generates a charge corresponding to an amount of incident light and accumulates the charge therein,a first transfer gate which transfers the charge accumulated in the photoelectric transducer,a charge holding region in which the charge transferred from the photoelectric transducer by the first transfer gate is held,a second transfer gate which transfers the charge held in the charge holding region,a floating diffusion region in which the charge transferred from the charge holding region by the second transfer gate is held to be read out as a signal,a charge discharging gate which transfers the charge received from the photoelectric transducer, to a charge discharging part, anda structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region, the overflow path being formed at a potential for determining a predetermined charge amount and transferring a charge exceeding the predetermined charge amount as a signal charge from the photoelectric transducer to the charge holding region, wherein as a channel electric-potential of the charge discharging gate, an electric-potential lower than an electric-potential of the overflow path is set, or an electric-potential higher than the electric-potential of the overflow path and lower than an electric-potential causing the photoelectric transducer to be completely depleted is set.