Method of making semiconductor device

摘要

A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

主权项

1. A method of making a semiconductor device comprising:
preparing a sensor wafer having one side and including a plurality of sensor portions, each sensor portion having one surface on the one side of the sensor wafer and including a sensor structure at a surface portion of the surface; preparing a cap wafer having a front side and a back side opposite to the front side, the cap wafer including a plurality of cap portions, each cap portion having a cover surface on the front side of the cap wafer and a second surface on the back side of the cap wafer; forming a wiring layer on the cover surface of the cap portion; forming a cover insulation layer on the first surface of the cap portion to cover the wiring layer on an upper surface and side surfaces; forming a trench on the first surface of the cap portion; forming a trench wall insulation layer on a wall of the trench; forming a buried electrode on the trench wall insulation layer; joining the one side of the sensor wafer to the front side of the cap wafer together with the wiring layer facing the sensor structure through the cover insulation layer, the buried electrode of the cap portion electrically connecting to a contact region of the sensor structure of the sensor portion and sealing the sensor structure between the sensor portion and the cap portion; removing the back side of the cap wafer until the trench and the buried electrode are exposed to a new surface of the back side of the cap wafer and forming a through hole and a through electrode extending from the first surface to the second surface of the cap portion; and dividing a joined body of the sensor wafer and the cap wafer into a plurality of semiconductor devices in the form of chips after the forming of the through electrode.