发明名称 Method of manufacturing a mask blank substrate, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
摘要 In a simulation step of simulating a surface configuration of a substrate which is used for a mask blank and which is set to an exposure apparatus, height information from a reference plane is derived from a plurality of measurement points on a main surface of the substrate. From the height information, a curved surface of fourth, fifth, or sixth order is approximated which is represented by a polynomial specified by a plurality of terms and coefficients of the terms. The coefficients are stored as coefficient information in association with the substrate.
申请公布号 US8785085(B2) 申请公布日期 2014.07.22
申请号 US201113638505 申请日期 2011.03.29
申请人 Hoya Corporation 发明人 Tanabe Masaru
分类号 G03F7/20;G06F17/50;G03B27/62 主分类号 G03F7/20
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A method of manufacturing a mask blank substrate, comprising: a preparation step of preparing a transparent substrate having a precision-polished main surface; a shape measurement step of measuring height information of the main surface from a reference plane at a plurality of measurement points set in an actual measurement region of the main surface, thereby obtaining a before-chucking main surface shape; a simulation step of obtaining, through simulation, an after-chucking main surface shape which is height information of the main surface from the reference plane at the plurality of measurement points when the transparent substrate is chucked on a mask stage of an exposure apparatus; an approximate curved surface calculation step of calculating an approximate curved surface based on the after-chucking main surface shape; and a recording step of recording information of the approximate curved surface in a recording apparatus in association with the transparent substrate.
地址 Tokyo JP