发明名称 |
Method of manufacturing a mask blank substrate, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device |
摘要 |
In a simulation step of simulating a surface configuration of a substrate which is used for a mask blank and which is set to an exposure apparatus, height information from a reference plane is derived from a plurality of measurement points on a main surface of the substrate. From the height information, a curved surface of fourth, fifth, or sixth order is approximated which is represented by a polynomial specified by a plurality of terms and coefficients of the terms. The coefficients are stored as coefficient information in association with the substrate. |
申请公布号 |
US8785085(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201113638505 |
申请日期 |
2011.03.29 |
申请人 |
Hoya Corporation |
发明人 |
Tanabe Masaru |
分类号 |
G03F7/20;G06F17/50;G03B27/62 |
主分类号 |
G03F7/20 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method of manufacturing a mask blank substrate, comprising:
a preparation step of preparing a transparent substrate having a precision-polished main surface; a shape measurement step of measuring height information of the main surface from a reference plane at a plurality of measurement points set in an actual measurement region of the main surface, thereby obtaining a before-chucking main surface shape; a simulation step of obtaining, through simulation, an after-chucking main surface shape which is height information of the main surface from the reference plane at the plurality of measurement points when the transparent substrate is chucked on a mask stage of an exposure apparatus; an approximate curved surface calculation step of calculating an approximate curved surface based on the after-chucking main surface shape; and a recording step of recording information of the approximate curved surface in a recording apparatus in association with the transparent substrate. |
地址 |
Tokyo JP |