| 摘要 |
A nonvolatile semiconductor memory has a memory cell structure with a doped semiconductor substrate, a gate electrode, a channel area disposed in the substrate below the gate electrode, a pair of variable resistance areas disposed on opposite sides of the channel area in the substrate, charge storage bodies formed above the variable resistance areas and on the sides of the gate electrode, and highly doped source and drain areas formed on opposite sides of the variable resistance areas in the substrate. The variable resistance areas are doped at a carrier concentration of 5x1017 cm-3 or less to ensure an adequate current difference between the programmed and erased states of the memory cell. The doping of the variable resistance areas differs from the lightly doped drain doping in peripheral circuit areas. |
