Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same

摘要

A semiconductor device includes a substrate structure including a first substrate and a second substrate, and a buried wiring interposed between the first substrate and the second structure, where the buried wiring is in direct contact with the second substrate. The semiconductor device further includes a vertical transistor located in the second substrate of the substrate structure. The vertical transistor includes a gate electrode and a semiconductor pillar, and the buried wiring is one of source electrode or a drain electrode of the vertical transistor.

主权项

1. A substrate structure having a first region and a second region discrete from and disposed laterally of the first region and, comprising:
a first substrate and a second substrate juxtaposed with the first substrate in a vertical direction in both the first and second regions of the substrate structure; buried wiring comprising an electrically conductive wiring layer, wherein the buried wiring contacts the second substrate in the first region of the substrate structure, and the second region of the substrate structure is devoid of the buried wiring and includes a source/drain region; and a contact plug extending through the second substrate from the source/drain region to the wiring layer of the buried wiring.