发明名称 |
Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film |
摘要 |
A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer. |
申请公布号 |
US8785938(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201213583851 |
申请日期 |
2012.08.02 |
申请人 |
Tsinghua University |
发明人 |
Zhao Lianfeng;Liang Renrong;Zhao Mei;Wang Jing;Xu Jun |
分类号 |
H01L29/786;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
Westman, Champlin & Koehler, P.A. |
代理人 |
Brush David D.;Westman, Champlin & Koehler, P.A. |
主权项 |
1. A method for forming a polycrystalline film, comprising steps of:
providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor layer; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer. |
地址 |
Beijing CN |