Semiconductor device and electronic device having the same

摘要

It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.

主权项

1. A semiconductor device comprising:
a first layer comprising a transistor; a first connection terminal connected with said transistor and provided on said first layer comprising said transistor; a second layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor; a second connection terminal provided on a first surface of said second layer comprising said passive element; a third connection terminal provided on a second surface of said second layer provided opposite to said first surface; an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said first connection terminal with said second connection terminal by the conductive particle; an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and a connection layer electrically connecting said third connection terminal with said antenna, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.