| 发明名称 | Nanowire FET | ||
| 摘要 | An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus. | ||
| 申请公布号 | US8785996(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201012856129 | 申请日期 | 2010.08.13 |
| 申请人 | Nokia Corporation | 发明人 | Colli Alan;White Richard |
| 分类号 | H01L27/108;G06N3/063;G06N3/067;G06N3/04;H01L31/113 | 主分类号 | H01L27/108 |
| 代理机构 | Harrington & Smith | 代理人 | Harrington & Smith |
| 主权项 | 1. An apparatus comprising: a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of photo-stimulus; wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of photo-stimulus above the threshold number of quanta of photo-stimulus. | ||
| 地址 | Espoo FI | ||