| 摘要 |
PURPOSE: A memristor-based memory circuit reading a memristor resistance value without a variation of the memristor resistance value by using a capacitor is provided to eliminate the variation of a memristor resistance value by enabling the amount of total charges passing through a memristor in the forward direction to be equal to the amount of total charges passing through the memristor in the backward direction due to capacitor discharge. CONSTITUTION: A second switch (130) is connected with a memristor (M) in series. A third switch (160) is connected with a capacitor (C) in parallel and provides a path to enable a current to be discharged to the ground through the second switch and the memristor when a strong input current pulse for storing a resistance value is applied to the memristor. A differential amplifier (170) measures a voltage across the memristor generated by the current of a current source. A first switch (120) provides a path to enable a current to be discharged to the ground, after the current is stored in the capacitor, through the memristor and then through the second switch in the backward direction compared to the direction when the current was being stored. |
