BCMD image sensor with junction gate for back side or front side illumination

摘要

The invention describes the solid-state image sensor array and in particular describes in detail the junction gate BCMD pixel sensor array that can be used in the back side illuminated mode as well as in the front side illuminated mode. The pixels generally do not need addressing transistors and the reset is accomplished in a vertical direction to the junction gate, so no additional reset transistor is needed for this purpose. As a result of this innovation the pixel maintains large charge storage capacity when its size is reduced, has low noise due to the nondestructive charge readout, and no RTS noise. The pixel interface generated dark current is also drained to the gate, so the image sensor array operates with very low dark current noise even at high temperatures. The junction gate also serves as a drain for the overflow charge.

主权项

1. A BCMD image sensor pixel array, comprising:
a plurality of pixel circuits, wherein each pixel circuit of the array comprises:
a BCMD transistor formed near the surface of a silicon substrate, wherein said BCMD transistor includes a junction gate, wherein charge reset is accomplished in a vertical direction to the junction gate, wherein said junction gate also serves as a drain for any overflow charge, whereby a built in anti-blooming capability is provided, and wherein said pixel is configured to be responsive to illumination from the front side of the silicon substrate; peripheral circuitry; and a pinned photodiode interfacing with said BCMD transistor with a junction gate, wherein charge generated from said front side illumination is not stored in said pinned photodiode but flows directly from said pinned photodiode to a BCMD storage well as it is being generated.