FinFETs and fin isolation structures

摘要

FinFETs and fin isolation structures and methods of manufacturing the same are disclosed. The method includes patterning a bulk substrate to form a plurality of fin structures of a first dimension and of a second dimension. The method includes forming oxide material in spaces between the plurality of fin structures of the first dimension and the second dimension. The method includes forming a capping material over sidewalls of selected ones of the fin structures of the first dimension and the second dimension. The method includes recessing the oxide material to expose the bulk substrate on sidewalls below the capping material. The method includes performing an oxidation process to form silicon on insulation fin structures and bulk fin structures with gating. The method further includes forming a gate structure over the SOI fin structures and the bulk fin structures.

主权项

1. A method comprising:
patterning a bulk substrate to form a plurality of fin structures of a first dimension and a plurality of fin structures of a second dimension; forming oxide material in spaces formed between the plurality of fin structures of the first dimension and the plurality of fin structures of the second dimension; forming a capping material over sidewalls of selected ones of the plurality of fin structures of the first dimension and the plurality of fin structures of the second dimension; recessing the oxide material to expose the bulk substrate on sidewalls below the capping material; performing an oxidation process to form silicon on insulation (SOI) fin structures from the selected ones of the plurality of fin structures of the first dimension, and bulk fin structures from the selected ones of the plurality of fin structures of the second dimension; and forming a gate structure over the SOI fin structures and the bulk fin structures.