| 发明名称 | Optoelectronic semiconductor device and the manufacturing method thereof | ||
| 摘要 | The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt. | ||
| 申请公布号 | US8785219(B1) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201414219490 | 申请日期 | 2014.03.19 |
| 申请人 | Epistar Corporation | 发明人 | Yu Tz Chiang;Fu Jenn Hwa;Huang Hsin Hsiung |
| 分类号 | H01L21/00;H01L31/18;H01L33/62 | 主分类号 | H01L21/00 |
| 代理机构 | Ditthavong & Steiner, P.C | 代理人 | Ditthavong & Steiner, P.C |
| 主权项 | 1. A method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt. | ||
| 地址 | Hsinchu TW | ||