Semiconductor device and method for manufacturing the same

摘要

An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

主权项

1. A semiconductor device comprising:
a gate electrode; an oxide semiconductor layer adjacent to the gate electrode; an insulating layer between the gate electrode and the oxide semiconductor layer; a source electrode electrically connected to the oxide semiconductor layer through a source region; a drain electrode electrically connected to the oxide semiconductor layer through a drain region, wherein the oxide semiconductor layer comprises a portion including silicon, wherein a concentration of silicon in the portion including silicon is larger than a concentration of silicon in the source region and the drain region, wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper.