发明名称 |
Semiconductor device and method of controlling semiconductor device |
摘要 |
Provided is a semiconductor device including: a memory cell having a variable resistance device; and a control unit that controls a voltage applied to the memory cell, wherein the variable resistance device includes a lower electrode contains a first metal material, an upper electrode containing a second metal material, and an insulating film containing oxygen, the first metal material has a normalized oxide formation energy higher than that of the second metal material, and the control unit applies a positive voltage to the upper electrode at the time of an operation of increasing a resistance value of the insulating film and an operation of decreasing the resistance value thereof, and applies a positive voltage to the lower electrode at the time of an operation of reading out the resistance value of the insulating film. |
申请公布号 |
US8787067(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201213359449 |
申请日期 |
2012.01.26 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Saitoh Motofumi;Terai Masayuki |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
McGinn IP Law Group, PLLC |
代理人 |
McGinn IP Law Group, PLLC |
主权项 |
1. A semiconductor device comprising:
a memory cell having a variable resistance device; and a control unit that controls a voltage applied to the memory cell, wherein the variable resistance device includes a first electrode containing a first metal material, a second electrode containing a second metal material, and an insulating film, provided between the first electrode and the second electrode, that contains a third metal material and oxygen, the first metal material has a normalized oxide formation energy higher than that of the second metal material, and the control unit applies a positive voltage to the second electrode at the time of an operation of increasing a resistance value of the insulating film and an operation of decreasing the resistance value thereof, and applies a positive voltage to the first electrode at the time of an operation of reading out the resistance value of the insulating film. |
地址 |
Kawasaki-shi, Kanagawa JP |