Semiconductor structure having an active device and method for manufacturing and manipulating the same

摘要

A semiconductor structure comprising a substrate, an active device, a field oxide layer and a poly-silicon resistor is disclosed. The active device is formed in a surface area of the substrate. The active device has a first doped area, a second doped area and a third doped area. The second doped area is disposed on the first doped area. The first doped area is between the second and the third doped areas. The first doped area has a first type conductivity. The third doped area has a second type conductivity. The first and the second type conductivities are different. The field oxide layer is disposed on a part of the third doped area. The poly-silicon resistor is disposed on the field oxide layer and is electrically connected to the third doped area.

主权项

1. A semiconductor structure, comprising:
a substrate;
an active device, formed in a surface area of the substrate, the active device having a first doped area, a second doped area and a third doped area, wherein the second doped area is disposed on the first doped area, the first doped area is disposed between the second and the third doped area, the first doped area has a first type conductivity, the third doped area has a second type conductivity and a drain, the first type conductivity and the second type conductivity are different;a field oxide layer, disposed on a part of the third doped area; anda poly-silicon resistor, disposed on the field oxide layer and electrically connected to the third doped area and coupled to a ground terminal, wherein the poly-silicon resistor comprising at least three electrical connecting terminals, the at least three electrical connecting terminals coupled to the drain, an internal circuit and the ground terminal, respectively.