Two step poly etch LDMOS gate formation

摘要

A method of making a transistor includes etching a first side of a gate, the gate including an oxide layer formed over a substrate and a conductive material formed over the oxide layer, the etching removing a first portion of the conductive material, implanting an impurity region into the substrate such that the impurity region is self-aligned, and etching a second side of the gate to remove a second portion of the conductive material.

主权项

1. A method of making a integrated circuit, comprising:
forming a plurality of LDMOS transistors on a substrate, each LDMOS transistor including a gate oxide layer comprising a first side closer to a source side of the LDMOS transistor and a second side closer to the drain side of the LDMOS transistor, the first side having a thickness of less than about 100 Å, and the second side having a thickness equal to or greater than 125 Å; forming a plurality of CMOS transistor on the substrate, wherein each CMOS transistor includes a gate oxide layer, and wherein forming the gate oxide layer of the CMOS transistor occurs simultaneously with forming the first side of the gate oxide layer of the LDMOS transistor.