Method of fabricating non-volatile memory device having small contact and related devices

摘要

A sacrificial pattern is formed to partially cover the pipe-shaped electrode. A sacrificial spacer is formed on a lateral surface of the sacrificial pattern. The sacrificial spacer extends across the pipe-shaped electrode. The sacrificial spacer has a first side and a second side opposite the first side. The sacrificial pattern is removed to expose the pipe-shaped electrode proximal to the first and second sides of the sacrificial spacer. The pipe-shaped electrode exposed on both sides of the sacrificial spacer may be primarily trimmed. The pipe-shaped electrode is retained under the sacrificial spacer to form a first portion, and a second portion facing the first portion. The second portion of the pipe-shaped electrode is secondarily trimmed. The sacrificial spacer is removed to expose the first portion of the pipe-shaped electrode. A data storage plug is formed on the first portion of the pipe-shaped electrode.

主权项

1. A method of fabricating a non-volatile memory device, comprising:
forming an electrode on a substrate having a word line; forming a sacrificial pattern to partially cover the electrode; forming a sacrificial spacer on a lateral surface of the sacrificial pattern, the sacrificial spacer extending across the electrode, the sacrificial spacer having a first side and a second side opposite the first side; removing the sacrificial pattern to expose the electrode proximal to the first and second sides of the sacrificial spacer; primarily trimming the electrode exposed proximal to the first and second sides of the sacrificial spacer, wherein the electrode is retained under the sacrificial spacer to form a first portion and a second portion facing the first portion; secondarily trimming the second portion of the electrode; removing the sacrificial spacer to expose the first portion of the electrode; and forming a data storage plug on the first portion of the electrode.