| 发明名称 | Semiconductor structure and method for making same | ||
| 摘要 | One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer. | ||
| 申请公布号 | US8786085(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201213671573 | 申请日期 | 2012.11.08 |
| 申请人 | Infineon Technologies AG | 发明人 | Barth Hans-Joachim;Vaupel Mathias;Steiner Rainer;Robl Werner;Pohl Jens;Plagmann Joern;Beer Gottfried |
| 分类号 | H01L23/48 | 主分类号 | H01L23/48 |
| 代理机构 | Infineon Technologies AG | 代理人 | Infineon Technologies AG |
| 主权项 | 1. A semiconductor structure, comprising: a workpiece including a opening a barrier layer overlying a bottom and a sidewall surface of said opening; a seed layer overlying a bottom and a sidewall surface of said barrier layer; an inhibitor layer overlying at least a top surface of said seed layer; and a fill layer disposed within said opening and overlies at least a bottom surface of said seed layer,wherein said inhibitor layer comprises Ta (tantalum). | ||
| 地址 | Neubiberg DE | ||