| 发明名称 | Reading data from multi-level cell memory | ||
| 摘要 | A method at a data storage device includes determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory. A second hard bit of a second logical page is sensed. The second hard bit corresponds to the particular cell. The first hard bit is used as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page. | ||
| 申请公布号 | US8787079(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201213465308 | 申请日期 | 2012.05.07 |
| 申请人 | Sandisk Technologies Inc. | 发明人 | Sharon Eran;Alrod Idan |
| 分类号 | G11C16/04;G11C16/06;G06F13/00;G11C29/00 | 主分类号 | G11C16/04 |
| 代理机构 | Toler Law Group, PC | 代理人 | Toler Law Group, PC |
| 主权项 | 1. A method comprising: in a data storage device having a multi-level cell (MLC) memory, performing: determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory;sensing a second hard bit of a second logical page, the second hard bit corresponding to the particular cell; andusing the first hard bit as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page. | ||
| 地址 | Plano TX US | ||