Method of manufacturing semiconductor device

摘要

According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming first and second cores on a processed material, forming a covering material having a stacked layer includes first and second layers, the covering material covering an upper surface and a side surface of the first and second cores, removing the second layer covering the first core, forming a first sidewall mask having the first layer on the side surface of the first core and a second sidewall mask having the first and second layers on the side surface of the second core by etching the covering material, removing the first and second cores, and forming first and second patterns having different width in parallel by etching the processed material in condition of using the first and second sidewall masks.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming first and second cores on a processed material; forming a covering material having a stacked layer comprising first and second layers, the covering material covering an upper surface and a side surface of each of the first and second cores; removing the second layer covering the first core; forming a first sidewall mask having the first layer on the side surface of the first core and a second sidewall mask having the first and second layers on the side surface of the second core by etching the covering material to expose a surface of the processed material; removing the first and second cores; and forming first and second patterns having a first width W1 and a second width W2 in parallel by etching the processed material in condition of using the first and second sidewall masks.