Trench transistor

摘要

A method of forming a device is disclosed. A substrate defined with a device region is provided. A buried doped region is formed in the substrate in the device region. A gate is formed in a trench in the substrate in the device region. A channel of the device is disposed on a sidewall of the trench. The buried doped region is disposed below the gate. A distance from the buried doped region to the channel is a drift length LD of the device. A surface doped region is formed adjacent to the gate.

主权项

1. A semiconductor device comprising:
a substrate defined with a device region; a buried heavily doped drain region in the substrate in the device region; a gate in a trench in the device region, wherein a channel of the device is disposed on a sidewall of the trench, the buried heavily doped drain region is disposed below the gate and is vertically and laterally displaced away from the channel of the device, wherein a distance from the buried heavily doped drain region to the channel is a drift length LD of the device; a drain connector disposed in the trench and is connected to the buried heavily doped drain region, wherein the drain connector is isolated from the gate; and a surface heavily doped region adjacent to the gate.