Bumped, self-isolated GaN transistor chip with electrically isolated back surface

摘要

A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.

主权项

1. A semiconductor device comprising:
a silicon substrate; a compound semiconductor material including an active area; an insulating material between the silicon substrate and the active area; and a top surface comprising: means of electrical connection to the active area, and a first passivation material, wherein the passivation material is silicon nitride, silicon dioxide, or a combination of both, and wherein the electrical connection includes at least one gate electrode, at least one drain electrode, and at least two source electrodes, wherein one of the source electrodes is used as a Kelvin connection.