Pattern measurement apparatus

摘要

It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.

主权项

1. A pattern dimension measuring apparatus for measuring a pattern on a sample based on information obtained based on charged-particle beam irradiation of the sample, said pattern dimension measuring apparatus comprising:
a storage medium for storing design data about a photomask subjected to double exposure; and an arithmetic unit for causing two sets of information obtained by exposure simulations performed respectively on first photomask image information and second photomask image information to be overlapped based on positional information about the pattern possessed by the design data, the first photomask image information and second photomask image information being obtained by the charged-particle beam irradiation of first and second photomasks split for the double exposure.