| 摘要 |
The present invention relates to a gallium nitride-based light emitting device having increased light extract efficiency which includes: a substrate; an n-type gallium nitride layer formed on the substrate; an active layer formed on the n-type gallium nitride layer; and a p-type gallium nitride layer formed on the active layer. An upper side of the p-type gallium nitride layer, the top layer, is coated with core-shell nanoparticles comprising materials different from each other having a refractive index of greater than 1.0 and less than 2.5. Therefore, the gallium nitride-based light emitting device reduces both of the Fresnel reflection and total internal reflection generated by a large difference between a refractive index of the p-type gallium nitride and a refractive index of an air layer, and thus can increase the light extract efficiency. |
