摘要 |
Provided are a sulfonium salt used in a resist composition which gives a pattern having a high resolution, in particular, an excellent rectangularity of a pattern shape, and small roughness in the photolithography using a high energy beam as a light source, and further is difficult to express defects, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a), wherein R and R0 independently represent a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a heteroatom, or interposed by a heteroatom. |