发明名称 SULFONIUM SALT, RESIST COMPOSITION AND PATTERNING PROCESS
摘要 Provided are a sulfonium salt used in a resist composition which gives a pattern having a high resolution, in particular, an excellent rectangularity of a pattern shape, and small roughness in the photolithography using a high energy beam as a light source, and further is difficult to express defects, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a), wherein R and R0 independently represent a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a heteroatom, or interposed by a heteroatom.
申请公布号 KR20140091443(A) 申请公布日期 2014.07.21
申请号 KR20130159864 申请日期 2013.12.20
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHASHI MASAKI;KOBAYASHI TOMOHIRO;SEKI AKIHIRO;SAGEHASHI MASAYOSHI;FUKUSHIMA MASAHIRO
分类号 C07D333/06;G03F7/028 主分类号 C07D333/06
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