发明名称 |
SEMICONDUCTOR DEVICES HAVING MODULATED NANOWIRE COUNTS |
摘要 |
<p>Semiconductor devices having modulated nanowire counts and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a plurality of nanowires disposed above a substrate and stacked in a first vertical plane with a first uppermost nanowire. A second semiconductor device has one or more nanowires disposed above the substrate and stacked in a second vertical plane with a second uppermost nanowire. The second semiconductor device includes one or more fewer nanowires than the first semiconductor device. The first and second uppermost nanowires are disposed in a same plane orthogonal to the first and second vertical planes.</p> |
申请公布号 |
KR20140091615(A) |
申请公布日期 |
2014.07.21 |
申请号 |
KR20147017256 |
申请日期 |
2011.12.23 |
申请人 |
INTEL CORP. |
发明人 |
CAPPELLANI ANNALISA;KUHN KELIN J.;RIOS RAFAEL;BHIMARASETTI GOPINATH;GHANI TAHIR;KIM, SEI YON |
分类号 |
H01L29/78;B82B3/00;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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