STRING SELECTION STRUCTURE OF THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

摘要

A string selection structure of a three-dimensional semiconductor device is provided. The three-dimensional semiconductor device includes: first and second selection lines which are successively stacked; an upper line which horizontally crosses the first and the second selection lines; and first and second vertical patterns which vertically cross the first and the second selection lines and is commonly connected to the upper line. The first and the second vertical patterns have first and second selection transistors which have first and second threshold voltages which are different from each other and connected in series. The first selection transistors of the first and the second vertical patterns are controlled by the first and the second selection lines.