| 发明名称 |
METHOD OF SCREENING HIGH-POWER InGaN/GaN LIGHT-EMITTING DIODES |
| 摘要 |
FIELD: physics.SUBSTANCE: method includes measuring spectral density of the low-frequency noise of each forward-biased light-emitting diode (LED) and current density in the range 0.1<J<10 A/cmbefore and after the process of ageing a LED for least 50 hours. Ageing is carried out at temperature of the p-n-junction in the range T=50-150°C, ambient temperature in the range T=25-120°C and current density through the forward-biased LED in the range J=35-100 A/cm. LEDs with an operating life of less than 50000 hours are identified from the low-frequency noise spectral density thereof after the ageing process which is more than an order higher than values before the ageing process.EFFECT: wider field of use owing to the screening of LEDs with an operating life shorter than 50000 hours for LEDs of any manufacturer, faster screening process.5 ex |
| 申请公布号 |
RU2523105(C1) |
申请公布日期 |
2014.07.20 |
| 申请号 |
RU20130111109 |
申请日期 |
2013.03.12 |
| 申请人 |
EEDERALNOE GOSUDARSTVENNOE BYUDZHETNOE UCHREZHDENIE NAUKI FISIKO-TEKHNICHSKIY INSTITUTE IM A.F. IOFFE ROSSIYKOY AKADEMII NAUK |
发明人 |
LEVINSHTEJN MIKHAIL EFIMOVICH;SHABUNINA EVGENIJA IGOREVNA;SHMIDT NATALIJA MIKHAJLOVNA |
| 分类号 |
H01L33/30 |
主分类号 |
H01L33/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
