| 摘要 |
FIELD: physics, optics.SUBSTANCE: invention relates to semiconductor light-emitting devices. The structure includes a III-nitride semiconductor structure comprising a light-emitting region located between an n-type region and a p-type region, wherein at least one layer in the light-emitting region is a B(InGa)N light-emitting layer, 0.06?x?0.08 and 0.1?y?0.14, having a band gap energy and a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the B(InGa)N light-emitting layer; an InGaN layer having the same band gap energy as the B(InGa)N layer, has a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the InGaN layer; and the bulk lattice constant of the B(InGa)N layer is less than the bulk lattice constant of the InGaN layer.EFFECT: invention provides a III-nitride semiconductor structure, where at least one layer in the light-emitting region contains boron.16 cl, 8 dwg |
