| 摘要 |
FIELD: radio engineering, communication.SUBSTANCE: invention can be used to make a microwave field-effect transistor. The method includes forming an n-n-i-type semiconductor structure by ion implantation of semi-insulating gallium arsenide wafers with silicon ions, wherein after forming the n-n-i-type structure and topographical features of the transistor on said structure, the method includes further doping of the wafer with silicon ions and implantation of boron ions into the wafer to considerably reduce the transistor channel, and a passive weakly conducting layer is formed on the open surface of the n-n-i-structure.EFFECT: forming a microwave field-effect transistor in the millimetre wavelength range with high output power and high power gain.1 dwg |
