A light emitting device according to the embodiment of the present invention comprises a substrate and a light emitting structure which is arranged on the substrate and includes a first conductive nitride semiconductor layer, a second conductive nitride semiconductor layer, and an active layer which is arranged between the first conductive nitride semiconductor layer and the second conductive nitride semiconductor layer. The active layer emits light of an ultraviolet wavelength band and includes a plurality of nitride barrier layers and a nitride well layer which is arranged between the nitride barrier layers. The thickness of an outer nitride barrier layer closest to the first conductive nitride semiconductor layer, among the nitride barrier layers, is thinner than the thicknesses of the other nitride barrier layers and is between 5 and 16nm.
