| 摘要 |
The disclosure relates to a semiconductor light emitting device which is configured to comprise a first light emitting portion and a second light emitting portion having an active layer for generating light by recombination of an electron and a hole respectively; a separation passage for separating the first light emitting portion and the second light emitting portion at a portion where the first light emitting portion and the second light emitting portion are opposed; a substrate on which the first light emitting portion and the second light emitting portion are grown, wherein the substrate is exposed to form the separation passage, and the region of the substrate excluding the separation passage is covered by the first light emitting portion and the second light emitting portion; and a connection electrode for electrically connecting the first light emitting portion and the second light emitting portion across the separation passage. |
