发明名称 |
THIN FILM TRANNSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A thin film transistor display panel according to one embodiment of the present invention etches only a first protection film positioned between a drain electrode and an electric field generating electrode without etching a gate insulation film at a display region for forming a first contact hole for connecting the electric field generating electrode with the drain electrode of the thin film transistor, then forms a second contact hole and a third contact hole exposing a gate pad part and a data pad part by simultaneously etching insulation films such as the gate insulation film, the first protection film and a second protection film positioned on a gate wire and a data wire at a peripheral region, so as to prevent the width of the first contact hole formed at the display region from being widened. Further, the generation of a short circuit between the drain electrode and the gate wire can be prevented since the gate insulation film is not etched when the first contact hole is formed at the display region, and the gate insulation film is positioned on the gate wire although at least part of the first contact hole is overlapped with the gate wire.</p> |
申请公布号 |
KR20140090852(A) |
申请公布日期 |
2014.07.18 |
申请号 |
KR20130002982 |
申请日期 |
2013.01.10 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK, JEONG MIN;KIM, JI HYUN;LEE, JUNG SOO;PARK, SUNG KYUN |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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