| 摘要 |
A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a carrier concentration of the active layer is 3 × 10 17 cm -3 or more and a film thickness of the active layer is 0.5 nm or more and less than 10 nm. A TFT is provided which has a low OFF current and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided. |
