| 摘要 |
Disclosed is a light emitting device in which light efficiency is improved. The light emitting device according to an embodiment is a vertical type light emitting device which emits light of a wavelength area lower than or equal to 400nm. The light emitting device comprises a supporting substrate; a light emitting structure which is arranged on the supporting substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer; and a stress relief layer which is arranged between the first semiconductor layer and the active layer. The stress relief layer is formed of a super lattice structure including multiple pair structures (0<y<x<1, 0<a<b<1) of a first floor of an AlxInaGa1-aN material and a second floor of an AlyInbGa1-y-bN material. |
