发明名称 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of shortening a period until the gas injection state is stabilized after opening a shutter, and to provide a film deposition method capable of shortening the period until the gas injection state is stabilized after opening the shutter.SOLUTION: A film deposition apparatus 10 includes a vapor deposition head 12 and a shutter 14. The vapor deposition head has an injection port for injecting gas containing gas molecules of a vapor deposition material. The shutter can be arranged on a position where gas from the injection port of the vapor deposition head can be blocked. The shutter has a cooling part for cooling the shutter.</p>
申请公布号 JP2014132101(A) 申请公布日期 2014.07.17
申请号 JP20110087276 申请日期 2011.04.11
申请人 TOKYO ELECTRON LTD 发明人 KANEKO HIROYOSHI;ONO YUJI;HAYASHI TERUYUKI;KUWATA HIROTAKA;OSHIMA KIYOMI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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