发明名称 |
FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of shortening a period until the gas injection state is stabilized after opening a shutter, and to provide a film deposition method capable of shortening the period until the gas injection state is stabilized after opening the shutter.SOLUTION: A film deposition apparatus 10 includes a vapor deposition head 12 and a shutter 14. The vapor deposition head has an injection port for injecting gas containing gas molecules of a vapor deposition material. The shutter can be arranged on a position where gas from the injection port of the vapor deposition head can be blocked. The shutter has a cooling part for cooling the shutter.</p> |
申请公布号 |
JP2014132101(A) |
申请公布日期 |
2014.07.17 |
申请号 |
JP20110087276 |
申请日期 |
2011.04.11 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KANEKO HIROYOSHI;ONO YUJI;HAYASHI TERUYUKI;KUWATA HIROTAKA;OSHIMA KIYOMI |
分类号 |
C23C14/24;H01L51/50;H05B33/10 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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