NITRIDE SEMICONDUCTOR DEVICE

摘要

This nitride semiconductor device has: a substrate; a buffer layer formed on the substrate; a laminated body wherein semiconductor layers, each of which includes a first nitride semiconductor layer and a second nitride semiconductor layer having a larger bandgap than the first nitride semiconductor layer, are laminated on the buffer layer such that the nitride semiconductor layers are laminated in this order in two or more cycles; a first electrode; and a second electrode. In each of the semiconductor layers, a channel layer is formed on the interface between the first nitride semiconductor layer and the second nitride semiconductor layer, and a carrier concentration of the channel layer of the topmost semiconductor layer is lower than carrier concentrations of the channel layers of other semiconductor layers.