| 摘要 |
An object is to increase charge transfer efficiency from a charge holding portion to an FD regardless of an impurity concentration of the charge holding portion in a solid-state image pickup device in which each of pixels has a charge holding portion. A solid-state image pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode, the second semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region. A first-conductivity-type third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region. |
