SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve electrical characteristics in a semiconductor device using an oxide semiconductor; or improve reliability in a semiconductor device using an oxide semiconductor.SOLUTION: In a transistor including a first oxide film and an oxide semiconductor film, a pair of electrodes having contact with the oxide semiconductor film and a second oxide film having contact with the oxide semiconductor film and the pair of electrodes, oxygen is added to the first oxide film and the second oxide film having contact with the oxide semiconductor film and the pair of electrodes thereby to reduce oxygen deficiency. By the diffusion of the oxygen in the oxide semiconductor film by a heating treatment and the like reduces oxygen deficiency of the oxide semiconductor film.