Epitaxial Formation Mechanisms of Source and Drain Regions

摘要

The embodiments of mechanisms for monitoring thermal budget of an etch process of a cyclic deposition/etch (CDE) process to form an epitaxially grown silicon-containing material are descried to enable and to improve process control of the material formation. The monitoring is achieved by measuring the temperature of each processed wafer as a function of process time to calculate the accumulated thermal budget (ATB) of the wafer and to compare the ATB with a reference ATB (or optimal accumulated thermal budget, OATB) to see if the processed wafer is within an acceptable range (or tolerance). The results are used to determine whether to pass the processed wafer or to reject the processed wafer.

主权项

1. A method of monitoring thermal budget of a process, comprising:
initiating the process on a substrate; measuring temperature of the substrate during the process; calculating accumulated thermal budget (ATB) of the process; and determining if a difference between the calculated ATB and a reference ATB (OATB) is within a tolerance, if the difference is within tolerance, further processing the substrate, if the difference is not within tolerance, flagging the substrate with a warning.