| 发明名称 |
COPPER ETCHING INTEGRATION SCHEME |
| 摘要 |
The present disclosure is directed to an interconnect structure. The metal interconnect structure has a metal body disposed over a semiconductor substrate and a projection extending from the metal body. A barrier layer continuously extends over the projection from a first sidewall of metal body to an opposing second sidewall of the metal body. A layer of dielectric material is disposed over the semiconductor substrate at a position abutting the metal body and the projection. |
| 申请公布号 |
US2014197538(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414218060 |
申请日期 |
2014.03.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Lu Chih-Wei;Lee Chung-Ju;Lee Hsiang-Huan;Bao Tien-I |
| 分类号 |
H01L23/532;H01L23/538 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An interconnect structure, comprising:
a metal body disposed over a semiconductor substrate; a projection extending outward from a top surface of the metal body; a barrier layer continuously extending over the projection from a first sidewall of the metal body to an opposing, second sidewall of the metal body; and a layer of dielectric material disposed over the semiconductor substrate at a position abutting the metal body and the projection. |
| 地址 |
Hsin-Chu TW |
