发明名称 SILICON SINGLE CRYSTAL WAFER, MANUFACTURING METHOD THEREOF AND METHOD OF DETECTING DEFECTS
摘要 A silicon single crystal wafer comprises an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.
申请公布号 WO2014109453(A1) 申请公布日期 2014.07.17
申请号 WO2013KR08314 申请日期 2013.09.13
申请人 LG SILTRON INC. 发明人 SIM, WOO-YOUNG
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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