| 摘要 |
<p>A p-channel flash memory device including a 3D NAND array has excellent performance characteristics. Techniques for operating 3D, p-channel NAND arrays include selective programming, selective (bit) erase, and block erase. Selective programming bias arrangements induce band-to-band tunneling current hot electron injection to increase threshold voltages in selected cells. Selective erase biasing arrangements induce -FN hole tunneling to decrease threshold voltages in selected cells. Also, block erase bias arrangements induce -FN hole tunneling in selected blocks of cells.</p> |
