发明名称 |
METHOD FOR OPERATING MEMORY SYSTEM; AND MEMORY SYSTEM AND MEMORY CARD INCLUDING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for operating a memory system capable of preventing the over-programming phenomenon of a memory cell; and provide a memory system and a memory card each including the method.SOLUTION: The method for operating a memory system including a flash memory device includes: programming at least one page belonging to a selected memory block of the flash memory device; and determining the selected memory block or the flash memory device to be invalid according to whether the number of times of a loop of the programmed page is out of a reference loop range. |
申请公布号 |
JP2014132511(A) |
申请公布日期 |
2014.07.17 |
申请号 |
JP20140046741 |
申请日期 |
2014.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM JONG-HWA;CHOI YOUNG-JOON;KEN SHAKUSEN |
分类号 |
G11C16/02;G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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