发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS
摘要 In one aspect, a substrate polishing apparatus is disclosed. The apparatus has a polishing platform having two or more zones, each zone adapted to contain a different slurry component. In another aspect, a substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.
申请公布号 US2014199840(A1) 申请公布日期 2014.07.17
申请号 US201314143276 申请日期 2013.12.30
申请人 Applied Materials, Inc. 发明人 Bajaj Rajeev;Osterheld Thomas H.;Chen Hung;Lee Terrance Y.
分类号 H01L21/306;H01L21/67 主分类号 H01L21/306
代理机构 代理人
主权项 1. A substrate polishing apparatus, comprising: a polishing platform having two or more zones, each zone adapted to contain a different slurry component.
地址 Santa Clara CA US