| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment. |
| 申请公布号 |
US2014199826(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414151378 |
申请日期 |
2014.01.09 |
| 申请人 |
Togawa Norihiro |
发明人 |
Togawa Norihiro |
| 分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method for a semiconductor device, comprising:
introducing an impurity into a SiC substrate; forming a mixed material layer, which is made of a resin and a fibrous carbon material, on a surface of the SiC substrate into which the impurity is introduced; performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate; and removing the mixed material layer after the heat treatment. |
| 地址 |
Nagoya-shi JP |
