发明名称 |
SULFONIUM SALT, RESIST COMPOSITION AND PATTERNING PROCESS |
摘要 |
A sulfonium salt used in a resist composition which gives a pattern having a high resolution, and small roughness in the photolithography using a high energy beam as a light source, and further difficultly eluted in water in the immersion lithography, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a),;;wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms at least one or more of the hydrogen atoms of which are substituted by a fluorine atom, R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a halogen atom, or interposed by a heteroatom. |
申请公布号 |
US2014199630(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201314103462 |
申请日期 |
2013.12.11 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
OHASHI Masaki;KOBAYASHI Tomohiro;SEKI Akihiro;SAGEHASHI Masayoshi;FUKUSHIMA Masahiro |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
1. A sulfonium salt represented by the following general formula (1a), wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms at least one or more of hydrogen atoms of which are substituted by a fluorine atom, and R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a halogen atom, or interposed by a heteroatom. |
地址 |
Tokyo JP |