TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF

摘要

A transistor array, comprising: a base (100) and multiple transistor units (200) sharing the base (100); the transistor unit (200) comprises: a bottom electrode (201) located on the base (100) and a bottom electrode connecting wire; a piezoelectric (202) on the bottom electrode (201), the piezoelectric (202) being a piezoelectric material; and a top electrode (203) on the piezoelectric (202). A transistor array manufacturing method: the transistor units (200) of the transistor array are two terminal devices; a piezoelectric (202) having the piezoelectric property is disposed between the top electrode (203) and bottom electrode (201) of the transistor unit (200); and the current carrier of the transistor unit (200) in a transistor array device can be effectively regulated, controlled or triggered during transportation via the stress strain added onto the transistor unit (200).